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High-Purity CVD/SSiC Silicon Carbide Tray for Semiconductor Wafer Processing with 99.9% Purity and Up to 1600°C Resistance

High-Purity CVD/SSiC Silicon Carbide Tray for Semiconductor Wafer Processing with 99.9% Purity and Up to 1600°C Resistance

ব্র্যান্ডের নাম: zmsh
MOQ.: 2
মূল্য: by case
প্যাকেজিংয়ের বিবরণ: কাস্টম কার্টন
অর্থ প্রদানের শর্তাবলী: টি/টি
বিস্তারিত তথ্য
উৎপত্তি স্থল:
চীন
Material:
SiC
Purity:
99.9%
Operating Temperature:
Up to 1600°C
Diameter:
custom sizes available
Thermal Shock Resistance:
Excellent
Density:
2.3 - 3.9 g/cm³
যোগানের ক্ষমতা:
কেস দ্বারা
বিশেষভাবে তুলে ধরা:

CVD silicon carbide wafer tray

,

SSiC semiconductor processing tray

,

silicon carbide ceramic wafer holder

পণ্যের বিবরণ

1. Overview


This precision radial-structured process carrier tray is an advanced industrial component engineered for applications that require exceptional mechanical strength, thermal stability, and dimensional precision. Featuring a combination of multi-zone annular slots and a reinforced network of radial support ribs, the tray is designed to deliver superior performance in complex and demanding production environments. Industries such as semiconductor manufacturing, LED epitaxy, advanced ceramics sintering, and high-temperature vacuum processing rely on this type of tray to ensure reliability, consistency, and high throughput.



High-Purity CVD/SSiC Silicon Carbide Tray for Semiconductor Wafer Processing with 99.9% Purity and Up to 1600°C Resistance 0


The tray’s geometry is optimized to distribute mechanical loads evenly, maintain structural rigidity under high stress, and improve thermal uniformity during operations involving rapid heating and cooling. Combined with high-purity ceramic or metal materials and robust machining processes, this product represents a new generation of industrial fixtures designed for precision-driven manufacturing.




2. Structural Features and Functional Design


2.1 Multi-Zone Annular Slot Framework


The tray incorporates several layers of well-distributed annular slots. These concentric channels serve multiple purposes:

  • Weight reduction: Lower mass decreases inertia during rotation and improves overall operational efficiency.

  • Heat flow optimization: The slots increase the effective heat dissipation area, allowing uniform temperature distribution across the surface.

  • Stress relief design: The segmented pattern minimizes thermal and mechanical stress concentration, reducing the risk of cracking or warping.

This multi-zone architecture is especially valuable in high-temperature sintering and semiconductor processes where thermal gradients must be precisely controlled.


2.2 Reinforced Radial Rib Network

The radial ribs form a cross-linked structural frame that significantly enhances mechanical strength. These ribs are strategically placed to:

  • Support heavy loads without deformation

  • Improve rotational stability when mounted on spindles

  • Resist bending or deflection during heating and cooling cycles

  • Maintain long-term dimensional accuracy

The combination of annular and radial structures results in a highly balanced design capable of maintaining its integrity in intense industrial environments.


2.3 High-Precision Machined Surface

The tray’s surface is manufactured using advanced CNC machining and surface conditioning processes. This ensures:

  • High flatness

  • Precise thickness uniformity

  • Smooth loading contact points

  • Reduced friction for substrates or fixtures

  • Consistent compatibility with automated equipment

Such precision machining is critical for semiconductor and optical applications, where even minor deviations may lead to defects or yield loss.


2.4 Centralized Mounting Interface

At the core of the tray is a specialized mounting interface composed of multiple precision-drilled holes. These holes enable:

  • Secure installation on rotating shafts

  • Alignment with furnace or vacuum chamber fixtures

  • Stable positioning for automated handling systems

  • Integration with custom engineering tools

This ensures the tray fits easily into various industrial workflows and equipment models.


2.5 Structural Reinforcement at the Outer Ring

The outer ring includes segmented reinforcement pads that strengthen the edge and maintain rotational balance. This enhances:

  • Vibration resistance

  • Peripheral load stability

  • Durability under repeated mechanical impact

Together with the internal rib system, the outer ring creates a rigid and stable carrier suitable for long service life.





3. Material Options for Different Applications

The tray can be manufactured from multiple high-performance materials depending on application requirements:


3.1 Sintered Silicon Carbide (SSiC)

  • Ultra-low porosity

  • High thermal conductivity

  • Excellent corrosion resistance

  • Ideal for ultra-clean semiconductor and vacuum environments


3.2 Reaction-Bonded Silicon Carbide (RBSiC)

  • Excellent thermal shock resistance

  • Good mechanical strength

  • Cost-effective for mass production

  • Suitable for sintering furnaces and LED manufacturing


3.3 Alumina Ceramic

  • Stable up to 1600°C

  • Affordable and versatile

  • Suitable for general thermal loading and ceramic processing


3.4 High-Strength Metals (Aluminum / Stainless Steel)

  • Good machinability

  • Suitable for mechanical equipment, automation, and handling

  • Ideal for non-thermal or medium-temperature processes

Each material is selected to ensure maximum performance under specific environmental conditions.




4. Key Industrial Applications


4.1 Semiconductor Manufacturing

  • Carrier tray for CVD and PECVD systems

  • Support platform for oxidation and diffusion processes

  • Annealing and rapid thermal processing (RTP) holder

  • Wafer handling and automated transfer tooling


4.2 LED and Optoelectronic Production

  • Sapphire and SiC wafer loading tray

  • High-temperature substrate processing carrier

  • Epitaxial support platform requiring stable thermal profiles


4.3 Advanced Material Processing

  • Powder metallurgy and sintering

  • Ceramic substrate firing

  • High-temperature vacuum furnace trays


4.4 Automation and Precision Machinery

  • Rotary fixture disc

  • Alignment base plate

  • Equipment mounting interface

  • Custom automated handling carrier

Its versatility makes it suitable for both thermal and mechanical engineering environments.



5. Major Advantages

5.1 Thermal Efficiency

  • Uniform heat distribution minimizes hotspots

  • Suitable for rapid thermal cycling

  • Ideal for precise high-temperature operations

5.2 Structural Durability

  • Excellent resistance to mechanical stress

  • Anti-deformation under load and temperature changes

  • Long operational lifespan reduces maintenance cycles

5.3 Process Stability

  • Low contamination risk when using SiC or ceramics

  • Consistent dimensional accuracy ensures high product yield

  • Compatible with vacuum, inert, or atmospheric conditions

5.4 Customizability

  • Dimensions, thickness, and slot geometry can be tailored

  • Multiple materials available

  • Central mounting interface can be customized

  • Surface finishing and marking options offered


FAQ


1. What is a SiC ceramic tray?

A SiC ceramic tray is a precision carrier made from high-purity silicon carbide, designed for supporting, loading, and transporting wafers or substrates during semiconductor, LED, optical, and vacuum-process manufacturing. It offers exceptional thermal stability, mechanical strength, and deformation resistance under harsh environments such as high temperature, plasma, and chemical processes.




2. What are the advantages of using SiC trays compared with quartz, graphite, or aluminum trays?

SiC trays provide several superior performance benefits:

  • High temperature resistance up to 1600–1800°C without deformation

  • Excellent thermal conductivity, ensuring uniform heat distribution

  • Outstanding mechanical strength and stiffness

  • Low thermal expansion, preventing warpage during thermal cycling

  • High corrosion resistance to plasma gases and chemicals

  • Longer service life under continuous high-stress manufacturing conditions




3. What applications are SiC ceramic trays mainly used for?

SiC trays are widely used in:

  • Semiconductor wafer handling

  • LPCVD, PECVD, MOCVD thermal processing

  • Annealing, diffusion, oxidation, and epitaxy processes

  • Sapphire wafer/optical substrate loading

  • High-vacuum and high-temperature environments

  • Precision CMP or polishing fixture platforms

  • Photonics and advanced packaging equipment




4. Can SiC trays handle thermal shock?

Yes. SiC ceramics offer excellent thermal shock resistance due to their low CTE and high fracture toughness. The tray can withstand rapid temperature rise or drop without cracking, making it ideal for high-temperature cycling processes.


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About Us


ZMSH specializes in high-tech development, production, and sales of special optical glass and new crystal materials. Our products serve optical electronics, consumer electronics, and the military. We offer Sapphire optical components, mobile phone lens covers, Ceramics, LT, Silicon Carbide SIC, Quartz, and semiconductor crystal wafers. With skilled expertise and cutting-edge equipment, we excel in non-standard product processing, aiming to be a leading optoelectronic materials high-tech enterprise.


High-Purity CVD/SSiC Silicon Carbide Tray for Semiconductor Wafer Processing with 99.9% Purity and Up to 1600°C Resistance 3

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